P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime-Reference-Cited by-同舟云学术

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

Published:2024-09 Issue:9 Volume:45 Page:1630-1633
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tallarico A. N.¹^ORCID,Millesimo M.¹^ORCID,Borga M.²^ORCID,Bakeroot B.³^ORCID,Posthuma N.²^ORCID,Cosnier T.⁴,Decoutere S.²^ORCID,Sangiorgi E.¹^ORCID,Fiegna C.¹

Affiliation:

1. Department of Electrical, Electronic and Information Engineering, Advanced Research Center on Electronic System, University of Bologna, Cesena, Italy

2. imec, Leuven, Belgium

3. Centre for Microsystems Technology, IMEC and Ghent University, Ghent, Belgium

4. Independent Researcher, Leuven, Belgium

Funder

Intelligent Reliability 4.0

iRel40 is a European co-funded innovation project that has been granted by the ECSEL Joint Undertaking

Horizon 2020 research programme and participating countries

National funding is provided by Germany, including the Free States of Saxony and Thuringia, Austria, Belgium, Finland, France, Italy, The Netherlands, Slovakia, Spain, Sweden, and Türkiye

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10648890/10587301.pdf?arnumber=10587301

Reference33 articles.

1. The 2018 GaN power electronics roadmap

2. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

3. GaN-on-Si Power Technology: Devices and Applications

4. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

5. Stability, Reliability, and Robustness of GaN Power Devices: A Review