Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation-Reference-Cited by-同舟云学术

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Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

Published:2019-04 Issue:4 Volume:40 Page:518-521
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tallarico Andrea Natale^ORCID,Stoffels Steve,Posthuma Niels,Decoutere Stefaan^ORCID,Sangiorgi Enrico^ORCID,Fiegna Claudio

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8680777/08636498.pdf?arnumber=8636498

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime;IEEE Electron Device Letters;2024-09

2. Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT;Aerospace;2024-04-26

3. Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure;Micromachines;2024-04-12

4. Enhanced Gate Reliability of Ohmic-Like p-GaN Gate HEMT With a Built-in Reverse Diode;IEEE Transactions on Electron Devices;2024-04

5. A Self-Consistent Approach Based on Bayesian Deconvolution for Trapping Time Constant Analysis: A Demonstration to Analyze ΔV _TH Transients in p-GaN Gate Power HEMTs;IEEE Transactions on Electron Devices;2024-03

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