Digital-Twin-Compatible Optimization of Switching Characteristics for SiC MOSFETs Using Genetic Algorithm-Reference-Cited by-同舟云学术

Digital-Twin-Compatible Optimization of Switching Characteristics for SiC MOSFETs Using Genetic Algorithm

Published:2023-10 Issue:4 Volume:4 Page:1024-1033
ISSN:2687-9735
Container-title:IEEE Journal of Emerging and Selected Topics in Industrial Electronics
language:
Short-container-title:IEEE J. Emerg. Sel. Top. Ind. Electron.

Author:

Takayama Hajime¹^ORCID,Fukunaga Shuhei²^ORCID,Hikihara Takashi¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Kyoto University, Kyoto, Japan

2. Division of Electrical, Electronic and Infocommunications Engineering, Osaka University, Suita, Japan

Funder

OPERA Program of Japan Science and Technology Agency

Cross-ministerial Strategic Innovation Promotion Program

Energy systems of an Internet of Energy (IoE) society

JSPS KAKENHI

JSPS Research Fellowships for Young Scientists

Nissin Electric Group Foundation for Social Contribution

Kyoto University WISE program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Medicine

Link

Reference30 articles.

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