Binary-weighted Modular Multi-level Digital Active Gate Driver
Author:
Affiliation:
1. Kyoto University,Department of Electrical Engineering,Nishikyo Kyoto,Japan
2. Osaka University,Division of Electrical, Electronic, and Infocommunications Engineering,Suita Osaka,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264670.pdf?arnumber=10264670
Reference20 articles.
1. Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs
2. Dynamic and static behavior of packaged silicon carbide MOSFETs in paralleled applications
3. Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules
4. Equalization of DC and Surge Components of Drain Current of Two Parallel-Connected SiC MOSFETs Using Single-Input Dual-Output Digital Gate Driver IC
5. Influence of Process Variations on the Electrical Performance of SiC Power MOSFETs
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