Data-Driven SiC MOSFET Active Gate Driving for 380V/3A LVDC System Protection Employing Recurrent Deep Neural Network-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Data-Driven SiC MOSFET Active Gate Driving for 380V/3A LVDC System Protection Employing Recurrent Deep Neural Network

Published:2024-05-24 Issue: Volume: Page:1-16
ISSN:1532-5008
Container-title:Electric Power Components and Systems
language:en
Short-container-title:Electric Power Components and Systems

Author:

Jeyaraj Pandia Rajan¹^ORCID,Albert Brindhu Kumari¹,Jothimani Gnanavadivel¹,Chellachi Kathiresan Aravind²,Subramanium Senthil Kumar³

Affiliation:

1. Department of Electrical and Electronics Engineering, Mepco Schlenk Engineering College, Sivakasi, India

2. School of Electrical Engineering, Vellore Institute of Technology, Chennai, India

3. Department of Electrical and Electronics Engineering, National Institute of Technology, Tiruchirappalli, India

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/15325008.2024.2356045

Reference24 articles.

1. Low Inductive Characterization of Fast-Switching SiC MOSFETs and Active Gate Driver Units

2. High-Switching-Frequency SiC Power Converter for High-Speed Switched Reluctance Machine

3. Real-Time FPGA Simulation of High-Voltage Silicon Carbide MOSFETs

4. Automated Flexible Modeling for Various Full-SiC Power Modules

5. Event-Driven Approach With Time-Scale Hierarchical Automaton for Switching Transient Simulation of SiC-Based High-Frequency Converter

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP