SiC MOSFETs connected in series with active voltage control-Reference-Cited by-同舟云学术

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SiC MOSFETs connected in series with active voltage control

Published:2015-11 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Palmer Patrick R,Zhang Jin,Zhang Xueqiang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7361121/7369025/07369274.pdf?arnumber=7369274

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Digital-Twin-Compatible Optimization of Switching Characteristics for SiC MOSFETs Using Genetic Algorithm;IEEE Journal of Emerging and Selected Topics in Industrial Electronics;2023-10

2. Variable Turn-OFF Gate Voltage Drive for Voltage Balancing of High-Speed SiC MOSFETs in Series-Connection;IEEE Transactions on Power Electronics;2022-08

3. Study of Voltage Balancing Techniques for Series-Connected Wide-Bandgap Semiconductors Devices;2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA);2021-11-07

4. A Modified RC Snubber With Coupled Inductor for Active Voltage Balancing of Series-Connected SiC MOSFETs;IEEE Transactions on Power Electronics;2021-10

5. Active Gate Drive With Gate–Drain Discharge Compensation for Voltage Balancing in Series-Connected SiC MOSFETs;IEEE Transactions on Power Electronics;2021-05

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