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Digital active gate drive of SiC MOSFETs for controlling switching behavior—Preparation toward universal digitization of power switching

  • Published:2021-09-05 Issue:1 Volume:50 Page:183-196
  • ISSN:0098-9886
  • Container-title:International Journal of Circuit Theory and Applications
  • language:en
  • Short-container-title:Circuit Theory & Apps

Author:

Takayama Hajime1ORCID,Okuda Takafumi1ORCID,Hikihara Takashi1ORCID

Affiliation:

1. Department of Electrical Engineering Kyoto University Kyoto Japan

Funder

Swine Innovation Porc

Japan Society for the Promotion of Science

Program on Open Innovation Platform with Enterprises, Research Institute and Academia

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Damping of Ringing Affecting Power Transistors by Means of Active Gate Drivers;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-04

2. Closed Loop Digital Design of Active Gate Driver based Power Converter;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

3. Digital-Twin-Compatible Optimization of Switching Characteristics for SiC MOSFETs Using Genetic Algorithm;IEEE Journal of Emerging and Selected Topics in Industrial Electronics;2023-10

4. Binary-weighted Modular Multi-level Digital Active Gate Driver;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

5. Slew rate control of switching transient for SiC MOSFET in boost converter using digital active gate driver;IET Power Electronics;2022-10-18
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