High-speed gate drive circuit for SiC MOSFET by GaN HEMT-Reference-Cited by-同舟云学术

High-speed gate drive circuit for SiC MOSFET by GaN HEMT

Published:2015 Issue:11 Volume:12 Page:20150285-20150285
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Nagaoka Kohei¹,Chikamatsu Kentaro²,Yamaguchi Atsushi²,Nakahara Ken²,Hikihara Takashi¹

Affiliation:

1. Department of Electrical Engineering, Kyoto University

2. Power Electronics R&D Division, ROHM Co., Ltd.

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/12/11/12_12.20150285/_pdf

Reference6 articles.

1. [1] H. Matsunami: Technology of Semiconductor SiC and Its Application (Nikkan Kogyo Shimbun, Tokyo, 2003) (in Japanese).

2. [2] S. Pendharkar and C. Chey: ECS Trans. 50 [3] (2013) 189. DOI:10.1149/05003.0189ecst

3. [3] T. Takuno, T. Hikihara, T. Tsuno and S. Hatsukawa: 13th European Conference on Power Electronics and Applications (EPE2009), Balcelona, Spain (2009).

4. [4] J. Würfl, O. Hilt, E. Bahat-Treidel, P. Kurpas, S. A. Chevchenko, O. Bengtsson, E. Ersoy, A. Liero, A. Wentzel, W. Heinrich, N. Badawi and S. Dieckerhoff: Proc. of the 8th European Microwave Integrated Circuits Conference, Nuremberg, Germany (2013) 176.

5. [5] K. Nagaoka and T. Hikihara: Technical Meeting of IEE Japan, ECT 14 [46] (2014) 65 (in Japanese).

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