Advanced Driver and Control IC Requirements for GaN and SiC Power Devices

Abstract

This paper talks about the differences in wide band gap semiconductor power devices (III-N and SiC) as compared to more conventional Si switching devices and how these differences drive the need for different gate control and driver features. III-Nitride materials like GaN have the potential to switch large amounts of power at much higher speeds than what Si is capable of. To take advantage of this, gate drive circuits with high noise immunity, low propagation delay and high dV/dt capability are required. On the other hand, higher band gap and higher thermal conductivity of SiC allows for higher amounts of power conversion at much higher temperatures (up to 250C and beyond) as well as at higher speeds. This requires gate drive IC technology that is capable of operating at much higher temperatures and withstand higher level of noise than what is needed for Silicon power devices.