A Study on Digital Active Gate Driving of DC-DC Converter for Suppressing Switching Surge Voltage
Author:
Affiliation:
1. Graduate School of Eng., Osaka University,Division of Electric, Electrical and Infocommunications Eng.,Osaka,Japan
2. Graduate school of Eng., Kyoto University,Department of Electrical Eng.,Kyoto,Japan
Funder
Council for Science, Technology and Innovation (CSTI)
Osaka University, Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9806820/9806821/09806952.pdf?arnumber=9806952
Reference18 articles.
1. In‐depth analysis of an RCD snubber applied to a DC‐DC boost converter
2. Switching-behavior improvement of insulated gate-controlled devices
3. A switching ringing suppression scheme of SiC MOSFET by active gate drive;huang;Proceedings of IPEMC-ECCE 2016,2016
4. Active Gate Driving Technique for a 1200 V SiC MOSFET to Minimize Detrimental Effects of Parasitic Inductance in the Converter Layout
5. Digital Active Gate Drives using sequential optimization
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