A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression-Reference-Cited by-同舟云学术

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A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression

Published:2022-05-25 Issue:10 Volume:19 Page:20220144-20220144
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Jin Jian¹,Sun Mengyuan¹,Yang Yannan¹,Xu Min¹,Zhang David Wei¹

Affiliation:

1. State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/19/10/19_19.20220144/_pdf

Reference31 articles.

1. [1] J. Glaser: “How GaN power transistors drive high-performance lidar: generating ultrafast pulsed power with GaN FETs,” IEEE Power Electron. Mag. 4 (2017) 25 (DOI: 10.1109/MPEL.2016.2643099).

2. [2] K.J. Chen, et al.: “GaN-on-Si power technology: devices and applications,” IEEE Trans. Electron Devices 64 (2017) 779 (DOI: 10.1109/TED.2017.2657579).

3. [3] J. Millán, et al.: “A survey of wide bandgap power semiconductor devices,” IEEE Trans. Power Electron. 29 (2014) 2155 (DOI: 10.1109/TPEL.2013.2268900).

4. [4] E.A. Jones, et al.: “Characterization of an enhancement-mode 650-V GaN HFET,” 2015 IEEE Energy Conversion Congress and Exposition (ECCE) (2015) 400 (DOI: 10.1109/ECCE.2015.7309716).

5. [5] D. Reusch and J. Strydom: “Evaluation of gallium nitride transistors in high frequency resonant and soft-switching DC-DC converters,” IEEE Trans. Power Electron. 30 (2015) 5151 (DOI: 10.1109/TPEL.2014.2364799).

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