Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

Published:2016-01 Issue:1 Volume:37 Page:84-87
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tyaginov Stanislav,Jech Markus,Franco Jacopo,Sharma Prateek,Kaczer Ben,Grasser Tibor

Funder

Austrian Science Fund (FWF)

European Community FP7 projects N°

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7365515/7337392.pdf?arnumber=7337392

Cited by 51 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure;IEEE Electron Device Letters;2024-09

2. Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. A Comprehensive SPICE Modeling Methodology for Hot-carrier Degradation;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage;IEEE Transactions on Device and Materials Reliability;2024-03

5. A Review of Reliability in Gate-All-Around Nanosheet Devices;Micromachines;2024-02-13

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP