Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET-Reference-Cited by-同舟云学术

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Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET

Published:2024-04-14 Issue: Volume: Page:P70.TX-1-P70.TX-4
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Qu Junru¹,Liu Dong¹,Chen Bing²,Sun Ying¹,Li Xinze¹,Jin Chengji³,Chen Jiajia³,Qian Haoji³,Shen Rongzong³,Yu Xiao³,Gao Dawei⁴,Cheng Ran¹,Han Genquan²

Affiliation:

1. School of Micro-Nano Electronics, Zhejiang University,Hangzhou,China,310000

2. School of Microelectronics, Xidian University,Xi'an,China,710071

3. Research Center for Intelligent Chips and Devices,Zhejiang Lab,Hangzhou,China,311121

4. Zhejiang ICsprout Semiconductor,Hangzhou,China,311200

Funder

Zhejiang Provincial Natural Science Foundation

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529455.pdf?arnumber=10529455

Reference17 articles.

1. An Empirically Validated Virtual Source FET Model for Deeply Scaled Cool CMOS

2. A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

3. 19.1 A Scalable Cryo-CMOS 2-to-20GHz Digitally Intensive Controller for 4×32 Frequency Multiplexed Spin Qubits/Transmons in 22nm FinFET Technology for Quantum Computers

4. Cryo-CMOS Circuits and Systems for Quantum Computing Applications

5. RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature

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