RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature-Reference-Cited by-同舟云学术

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RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature

Published:2009-04 Issue: Volume: Page:
ISSN:1541-7026
Container-title:2009 IEEE International Reliability Physics Symposium
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Author:

Sagong Hyun Chul,Lee Kyong Taek,Hong Seung-Ho,Choi Hyun-Sik,Choi Gil-Bok,Baek Rock-Hyun,Song Seung-Hyun,Park Min-Sang,Kim Jae Chul,Jeong Yoon-Ha,Jung Sung-Woo,Kang Chang Yong

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5164157/5173200/05173397.pdf?arnumber=5173397

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFET;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. The Interfacial Defects Characteristic and Low-Temperature Electrical Properties of the Germanium Oxynitride Passivation Film for Ge- Based Mos Device and High Purity Germanium Detectors;2024

3. Characterization of 22 nm FDSOI nMOSFETs With Different Backplane Doping at Cryogenic Temperature;IEEE Journal of the Electron Devices Society;2021

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