Transient Overvoltage Detection Technique for GaN HEMTs Integrated in a 200-V GaN-on-SOI Process
Author:
Affiliation:
1. University of Toronto,The Edward S. Rogers Sr. Department of Electrical & Computer Engineering,Canada
2. ON Semiconductor,Oudenaarde,Belgium
Funder
Natural Sciences and Engineering Research Council of Canada (NSERC)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9773364/9773365/09773399.pdf?arnumber=9773399
Reference17 articles.
1. Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
2. A Dual-Mode Driver IC With Monolithic Negative Drive-Voltage Capability and Digital Current-Mode Controller for Depletion-Mode GaN HEMT
3. Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs
4. CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors
5. A Segmented Gate Driver for E-mode GaN HEMTs with Simple Driving Strength Pattern Control
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1. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07
2. Voltage Reference and Zero Current Detector Monolithically Integrated on p-GaN Technology Designed for Process Corners Compensation;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19
3. Superior Threshold-Voltage and On-Resistance Stability in GaN HEMTs Enabled by a Gate ESD Protection Circuit;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19
4. Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching;IEEE Electron Device Letters;2023-02
5. GaN Active Rectifier Diode;IEEE Open Journal of Power Electronics;2022
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