Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface
Author:
Affiliation:
1. Virginia Tech,Center for Power ElectronicsSystems (CPES),Blacksburg,USA
2. CPES Virginia Tech,Blacksburg,USA
3. Cambridge GaN Devices Ltd,Cambridge,UK
Funder
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10509012/10509018/10509533.pdf?arnumber=10509533
Reference25 articles.
1. Multidimensional device architectures for efficient power electronics
2. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
3. A Smart Gate Driver IC for GaN Power HEMTs With Dynamic Ringing Suppression
4. Transient Overvoltage Detection Technique for GaN HEMTs Integrated in a 200-V GaN-on-SOI Process
5. Stability, Reliability, and Robustness of GaN Power Devices: A Review
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