Superior Threshold-Voltage and On-Resistance Stability in GaN HEMTs Enabled by a Gate ESD Protection Circuit
Author:
Affiliation:
1. Center for Power Electronics Systems, Virginia Polytechnic Institute and State University,Blacksburg,VA,USA
2. Innoscience America,Santa Clara,CA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131618.pdf?arnumber=10131618
Reference31 articles.
1. Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs
2. Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
3. Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance
4. Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage
5. True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching
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