Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage
Author:
Affiliation:
1. Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA
2. Research Institute for Applied Mechanics, Kyushu University, Fukuoka, Japan
Funder
CPES
Virginia Polytechnic Institute and State University
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9911205/09857599.pdf?arnumber=9857599
Reference53 articles.
1. Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode;hu;Appl Phys Lett,2015
2. A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors
3. Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET
4. Robust Through-Fin Avalanche in Vertical GaN Fin-JFET With Soft Failure Mode
5. Tuning Avalanche Path in Vertical GaN JFETs By Gate Driver Design
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