Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology
Link
https://ieeexplore.ieee.org/ielam/6245517/9502054/8974264-aam.pdf
Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of $V_\mathsf {th}$ Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors;IEEE Transactions on Power Electronics;2024-09
2. Evidence‐Based Understanding of Lateral Hole Transport During OFF‐State Stress Completing Dynamic GaN‐on‐Si Buffer Charging Model;physica status solidi (a);2024-05-15
3. Satisfaction with Behavior Trajectory Security Protection in Social Media Intelligent Recommendations;Libri;2024-05-09
4. Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT;ECS Journal of Solid State Science and Technology;2024-05-01
5. Stability of GaN HEMT Device Under Static and Dynamic Gate Stress;IEEE Journal of the Electron Devices Society;2024
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