A Segmented Gate Driver for E-mode GaN HEMTs with Simple Driving Strength Pattern Control-Reference-Cited by-同舟云学术

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A Segmented Gate Driver for E-mode GaN HEMTs with Simple Driving Strength Pattern Control

Published:2020-09 Issue: Volume: Page:
ISSN:
Container-title:2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Zhang Wei Jia,Yu Jingshu,Leng Yahui,Cui Wen Tao,Deng Gao Qiang,Ng Wai Tung

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170108.pdf?arnumber=9170108

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 3-level Active Gate Driver Network for SiC MOSFETs to Minimize Overshoot and Switching Losses;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

2. Large-Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot;IEEE Transactions on Power Electronics;2023-07

3. Digital Gate Driver IC with Real-Time Gate Current Change by Sensing Drain Current to Cope with Operating Condition Variations of SiC MOSFET;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

4. A 50-V 50-MHz High-Noise-Immunity Capacitive-Coupled Level Shifter With Digital Noise Blanker for GaN Drivers;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-05

5. Digital Gate ICs for Driving and Sensing Power Devices to Achieve Low-Loss, Low-Noise, and Highly Reliable Power Electronic Systems;2023 IEEE Custom Integrated Circuits Conference (CICC);2023-04

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