Digital Gate Driver IC with Real-Time Gate Current Change by Sensing Drain Current to Cope with Operating Condition Variations of SiC MOSFET
Author:
Affiliation:
1. The University of Tokyo,Tokyo,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10213399/10213452/10213558.pdf?arnumber=10213558
Reference24 articles.
1. 15.8 A 4.5V/ns Active Slew-Rate-Controlling Gate Driver with Robust Discrete-Time Feedback Technique for 600V Superjunction MOSFETs
2. SiC power devices and modules application note;Rev 003,2020
3. Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs
4. Stop-and-Go Gate Drive Minimizing Test Cost to Find Optimum Gate Driving Vectors in Digital Gate Drivers
5. A Self-Regulating Gate Driver for High-Power IGBTs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions;Energies;2024-05-30
2. Digital Active Gate Driving Automatically Minimizing Switching Loss While Keeping Surge Current Below User-Specified Target;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
3. Active Gate Driving With Full 6-Bit Resolution for Different SiC MOSFETs Using Variable Gate Current Range Digital Gate Driver IC;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3