Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions
Author:
Pennisi Giuseppe1, Pulvirenti Mario1ORCID, Salvo Luciano1, Sciacca Angelo Giuseppe1, Cascino Salvatore1, Laudani Antonio2, Salerno Nunzio2ORCID, Rizzo Santi Agatino2ORCID
Affiliation:
1. ST Microelectronics s.r.l., 95121 Catania, Italy 2. Department of Electrical Electronic and Computer Engineering (DIEEI), University of Catania, 95125 Catania, Italy
Abstract
This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order to optimize the MOSFETs commutations aiming at improving efficiency. Indeed, reverse recovery is a part of the switching transient, but it has a significant role due to its impact on recovery energy and charge. The set of different operating conditions has been properly chosen to prevent or force the snappy recovery of the device under testing. The experimental results and specific software simulations have revealed phenomena unknown in the literature. More specifically, the analysis of the reverse recovery charge, Qrr, revealed two unexpected phenomena at high temperatures: it decreased with increasing gate voltage; the higher the device threshold, the higher the Qrr. TCAD-Silvaco (ATLAS v. 5.29.0.C) simulations have shown that this is due to a displacement current flowing in the drift region due to the output capacitance voltage variation during commutation. From the analysis of the snappy recovery, it has emerged that there is a minimum forward current slope, below which the reverse recovery cannot be snappy, even for a high current level. Once this current slope is reached, Qrr varies with the forward current only.
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