A Self-Regulating Gate Driver for High-Power IGBTs-Reference-Cited by-同舟云学术

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A Self-Regulating Gate Driver for High-Power IGBTs

Published:2021-03 Issue:3 Volume:36 Page:3450-3461
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Ling Yatao^ORCID,Zhao Zhengming^ORCID,Zhu Yicheng^ORCID

Funder

National Key Research and Development Program of China

Fuji Electric Company, Ltd.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9240073/09165116.pdf?arnumber=9165116

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Control Strategy for Optimal Tradeoff between Overshoot and Switching Loss Based on Double Closed-Loop Self-Regulating Active Gate Driver;IEEE Transactions on Power Electronics;2024-10

2. Optimization Method of SiC MOSFET Switching Trajectory Based on Variable Current Drive;Electronics;2024-07-31

3. Active Gate Driver IC Integrating Gate Voltage Sensing Technique for SiC MOSFETs;IEEE Transactions on Power Electronics;2024-07

4. Review of IGBT Intelligent Gate Drive and Protection Strategies;IEEE Transactions on Power Electronics;2024-06

5. An Integrated Digital Signal Feedback Sensor for Fast Transient Measurements of SiC-MOSFET Modules;IEEE Transactions on Power Electronics;2024-03

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