A 3-level Active Gate Driver Network for SiC MOSFETs to Minimize Overshoot and Switching Losses-Reference-Cited by-同舟云学术

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A 3-level Active Gate Driver Network for SiC MOSFETs to Minimize Overshoot and Switching Losses

Published:2024-02-25 Issue: Volume: Page:2794-2799
ISSN:
Container-title:2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Choo Vin Loong¹,Pfost Martin¹

Affiliation:

1. TU Dortmund University,Chair of Energy Conversion,Dortmund,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10509012/10509018/10509175.pdf?arnumber=10509175

Reference14 articles.

1. A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate Drivers

2. A Four-level Active Gate Driver with Continuously Adjustable Intermediate Gate Voltages

3. Adaptive Multi-Level Active Gate Drivers for SiC Power Devices

4. Dynamic Gate Drive for SiC Power MOSFETs with Sub-nanosecond Timings

5. A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory

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