A Four-level Active Gate Driver with Continuously Adjustable Intermediate Gate Voltages

Author:

Du Xia1,Wei Yuqi1,Stratta Andrea1,Du Liyang1,Machireddy Venkata Samhitha1,Mantooth Alan1

Affiliation:

1. University of Arkansas,Department of Electrical Engineering,AR,USA

Funder

National Science Foundation

Publisher

IEEE

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Advanced gate driving concepts and switching optimization for SiC semiconductors;Automatika;2024-06-25

2. Design and Demonstration of a Medium-Voltage High-Power All Silicon Carbide ANPC Converter With Optimized Busbar Architecture;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-06

3. A 3-level Active Gate Driver Network for SiC MOSFETs to Minimize Overshoot and Switching Losses;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

4. A Cost-efficient Hybrid Gate Driver For SiC MOSFETs and IGBTs;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24

5. Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions;IEEE Transactions on Power Electronics;2023-08

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