An Analog Active Gate Drive Circuit Architecture for Wide Band Gap Devices-Reference-Cited by-同舟云学术

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An Analog Active Gate Drive Circuit Architecture for Wide Band Gap Devices

Published:2019-09 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Ramabhadran Ramanujam,Todorovic Maja Harfman,Li Cong,Asa Erdem,Huh Kum-Kang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8897530/8911826/08912218.pdf?arnumber=8912218

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Cost Effective Gate Drive Circuit for Improved Switching Performance in SiC Traction Inverters;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

2. A Four-level Active Gate Driver with Continuously Adjustable Intermediate Gate Voltages;2022 IEEE Applied Power Electronics Conference and Exposition (APEC);2022-03-20

3. A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate Drivers;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021-08

4. Driving, Monitoring and Protection Technology for SiC Devices Using Intelligent Gate Drive: An Overview;2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia);2020-11-29

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