Dynamic Gate Drive for SiC Power MOSFETs with Sub-nanosecond Timings-Reference-Cited by-同舟云学术

Dynamic Gate Drive for SiC Power MOSFETs with Sub-nanosecond Timings

Published:2023-03-19 Issue: Volume: Page:
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Container-title:2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Li Rophina¹,Hou Zhaozheng²,Liu Tiantian³,Elshazly Mohamed¹,Leung Sut¹,Peng Xingqiang²,Ng Wai Tung¹

Affiliation:

1. University of Toronto,The Edward S. Rogers Sr. Department of Electrical and Computer Engineering,Toronto,Canada

2. Huawei Digital Energy Technology Co,Shenzhen,China

3. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics,Shanghai,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131504.pdf?arnumber=10131504

Reference8 articles.

1. A Dynamic Gate Driver IC with Automated Pattern Optimization for SiC Power MOSFETs

2. Active dv/dt Control with Turn-off Gate Resistance Modulation for Voltage Balancing of Series Connected SiC MOSFETs

3. Gate and base drivers for silicon carbide power transistors: An overview;peftitsis;IEEE Transactions on Power Electronics,2016

4. A Study on Switching Surge Voltage Suppression of SiC MOSFET by Digital Active Gate Drive

5. A Novel Active Gate Driver for Improving Switching Performance of High-Power SiC MOSFET Modules

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1. A 3-level Active Gate Driver Network for SiC MOSFETs to Minimize Overshoot and Switching Losses;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

2. Wireless Control of Active Gate Drivers for Silicon Carbide Power MOSFETs;IEEE Open Journal of the Industrial Electronics Society;2023