A Monolithic 200V GaN Half Bridge IC with Integrated Gate Drivers and Level-shifters Achieving 98.3% Peak Efficiency-Reference-Cited by-同舟云学术

A Monolithic 200V GaN Half Bridge IC with Integrated Gate Drivers and Level-shifters Achieving 98.3% Peak Efficiency

Published:2022-03-20 Issue: Volume: Page:
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Container-title:2022 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Aygun Deniz¹,Fossion Marc²,Decoutere Stefaan³,Barnes Andrew⁴,Delepaut Christophe⁵,Thone Jef¹,Wens Mike¹

Affiliation:

1. MinDCet NV,Leuven,Belgium

2. Thales Alenia Space Belgium,Charleroi,Belgium

3. imec vzw,Leuven,Belgium

4. ESA-ECSAT,Oxfordshire,United Kingdom

5. ESA-ESTEC,Noordwijk,The Netherlands

Funder

European Space Agency

Publisher

IEEE

Link

Reference7 articles.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Modelling of Monolithic Half-bridge IC with Integrated Gate Drivers and Power e-HEMT Based on GaN-on-SOI Platform;2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE);2023-11-10

2. High-Side PMOS Driving Half-Bridge Driver with a Higher Turn-Off Rate;2023 5th International Conference on Circuits and Systems (ICCS);2023-10-27