Development of Half-bridge IC with On-chip Drivers and Power e-HEMT Based on GaN-on-SOI Platform-Reference-Cited by-同舟云学术

Development of Half-bridge IC with On-chip Drivers and Power e-HEMT Based on GaN-on-SOI Platform

Published:2022-11-17 Issue: Volume: Page:
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Container-title:2022 International Siberian Conference on Control and Communications (SIBCON)
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Author:

Polyntsev Egor S.¹,Prokazina Irina Y.¹,Bartenev Aleksandr I.²,Sogomonyants Alina A.³,Kagadey Valery A.¹

Affiliation:

1. National research Tomsk State University,Engeneering Center of Microwave Equipment and Technologies,Tomsk,Russia

2. Tomsk University of Control Systems and Radioelectronics,Department of industrial electronics,Tomsk,Russia

3. Tomsk University of Control Systems and Radioelectronics,Laboratory of Robotics and Artificial Intellegence,Tomsk,Russia

Publisher

IEEE

Link

Reference16 articles.

2. GaN-ICs for monolithic integration of power systems 200V & 650V;Imec-int com,2022

3. Single-channel GaN gate driver for power e-mode n-GaN transistor;polyntsev;19th All-Russian Conf of Student Research Incubators,2022

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1. Thermal Analysis of Packaging Solution for GaN Multi-Chip Power Micromodule;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

3. Thermal Modelling of Monolithic Half-bridge IC with Integrated Gate Drivers and Power e-HEMT Based on GaN-on-SOI Platform;2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE);2023-11-10

4. IC Development of CMOS PWM Controller for Driving GaN-Based Switching Mode Power Converters;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29