Thermal Modelling of Monolithic Half-bridge IC with Integrated Gate Drivers and Power e-HEMT Based on GaN-on-SOI Platform-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Thermal Modelling of Monolithic Half-bridge IC with Integrated Gate Drivers and Power e-HEMT Based on GaN-on-SOI Platform

Published:2023-11-10 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE)
language:
Short-container-title:

Author:

Kodorova Irina Y.¹,Polyntsev Egor S.²,Kagadey Valery A.²

Affiliation:

1. Tomsk Branch of JSC «Radar mms»,Integrated Circuit Design Department,Tomsk,Russia

2. National Research Tomsk State University,Engeneering Center of Microwave Equipment and Technologies,Tomsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10347555/10347542/10347817.pdf?arnumber=10347817

Reference18 articles.

1. Half-Bridge GaN Power ICs: Performance and Application

2. Challenges for energy efficient wide band gap semiconductor power devices

3. GaN Technology for Power Electronic Applications: A Review

4. 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

5. Chip-level thermal management in GaN HEMT: Critical review on recent patents and inventions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Analysis of Packaging Solution for GaN Multi-Chip Power Micromodule;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP