Thermal Modelling of Monolithic Half-bridge IC with Integrated Gate Drivers and Power e-HEMT Based on GaN-on-SOI Platform
Author:
Affiliation:
1. Tomsk Branch of JSC «Radar mms»,Integrated Circuit Design Department,Tomsk,Russia
2. National Research Tomsk State University,Engeneering Center of Microwave Equipment and Technologies,Tomsk,Russia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10347555/10347542/10347817.pdf?arnumber=10347817
Reference18 articles.
1. Half-Bridge GaN Power ICs: Performance and Application
2. Challenges for energy efficient wide band gap semiconductor power devices
3. GaN Technology for Power Electronic Applications: A Review
4. 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration
5. Chip-level thermal management in GaN HEMT: Critical review on recent patents and inventions
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