Thermal Modeling and Layout Optimization of GaN Half-Bridge IC with Integrated Drivers and Power HEMTs
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Published:2024-06
Issue:3
Volume:53
Page:268-275
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ISSN:1063-7397
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Container-title:Russian Microelectronics
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language:en
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Short-container-title:Russ Microelectron
Author:
Kagadey V. A., Kodorova I. Y.ORCID, Polyntsev E. S.
Publisher
Pleiades Publishing Ltd
Reference26 articles.
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(a), 2014, vol. 211, no. 9, pp. 2063–2071. https://doi.org/10.1002/pssa.201300558 3. Flack, T.J., Pushpakaran, B.N., and Bayne, S.B., GaN technology for power electronic applications: A review, J. Electron. Mater., 2016, vol. 45, no. 6, pp. 2673–2682. https://doi.org/10.1007/s11664-016-4435-3 4. Li, X., Van Hove, M., Zhao, M., Geens, K., Lempinen, V.-P., Sormunen, J., Groeseneken, G., and Decoutere, S., 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration, IEEE Electron Device Lett., 2017, vol. 38, no. 7, pp. 918–921. https://doi.org/10.1109/led.2017.2703304 5. Chen, H.-Yu., Kao, Yu.-Yu., Zhang, Zh.-Q., Liao, Ch.-H., Yang, H.-Yu., Hsu, M.-Sh., Chen, K.-H., Lin, Yi.-H., Lin, Sh.-R., and Tsai, T.-Ye., 33.1 A fully integrated GaN-on-silicon gate driver and GaN switch with temperature-compensated fast turn-on technique for improving reliability, 2021 IEEE Int. Solid- State Circuits Conf. (ISSCC), San Francisco, 2021, IEEE, 2021, pp. 460–462. https://doi.org/10.1109/isscc42613.2021.9365828
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