High-Side PMOS Driving Half-Bridge Driver with a Higher Turn-Off Rate
Author:
Affiliation:
1. North-China Integrated Circuit Design CO., Ltd, The 13th research institute, CETC,Hebei Key Laboratory of Radio Frequency Integrated Circuit for Mobile Communication,Shijiazhuang,P. R. China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10367210/10367213/10367260.pdf?arnumber=10367260
Reference18 articles.
1. Design of High Step-Down Ratio Isolated Three-Level Half-Bridge DC–DC Converter With Balanced Voltage on Flying Capacitor
2. A Monolithic 200V GaN Half Bridge IC with Integrated Gate Drivers and Level-shifters Achieving 98.3% Peak Efficiency
3. A Grid-Connected Capacitor-Tapped Multimodule Converter for HVDC Applications: Operational Concept and Control
4. Driving GaN HEMT High-Voltage Half-Bridge with a Single-Channel Non-Isolated Gate Driver with Truly Differential Inputs;Varajao,2020
5. SHEPWM Class-D Amplifier with a Reconfigurable Gate Driver Integrated Circuit
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