Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates-Reference-Cited by-同舟云学术

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Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates

Published:2019-09 Issue:9 Volume:40 Page:1499-1502
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Li Xiangdong^ORCID,Geens Karen,Guo Weiming,You Shuzhen^ORCID,Zhao Ming,Fahle Dirk,Odnoblyudov Vladimir,Groeseneken Guido^ORCID,Decoutere Stefaan^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8811651/08765393.pdf?arnumber=8765393

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4. Low static power consumption GaN-based CMOS-like inverter design;Journal of Power Electronics;2024-05-31

5. Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer;IEEE Transactions on Electron Devices;2024-04

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