Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode
Author:
Affiliation:
1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
2. imec, Leuven, Belgium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/16/10609410/10559805.pdf?arnumber=10559805
Reference17 articles.
1. Optimal Design of Planar Magnetic Components for a Two-Stage GaN-Based DC–DC Converter
2. 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration
3. GaN-on-Si Power Technology: Devices and Applications
4. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration
5. On the Origin of the $C_{\text{oss}}$ -Losses in Soft-Switching GaN-on-Si Power HEMTs
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