Low static power consumption GaN-based CMOS-like inverter design
Author:
Funder
Innovative Research Group Project of the National Natural Science Foundation of China
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s43236-024-00847-9.pdf
Reference30 articles.
1. Chen, K.J., et al.: GaN-on-Si power technology: devices and applications. IEEE Trans. Electron Devices 64, 779–795 (2017)
2. Dang, K., et al.: A 58-GHz high-power and high-efficiency rectifier circuit with lateral GaN Schottky diode for wireless power transfer. IEEE Trans. Power Electron. 35, 2247–2252 (2020)
3. Aklimi, E., et al.: Hybrid CMOS/GaN 40-MHz maximum 20-V input DC–DC multiphase buck converter. IEEE Trans. Power Electron. 52, 1618–1627 (2017)
4. Jones, E.A., et al.: Review of commercial GaN power devices and GaN-based converter design challenges. IEEE J. Emerg. Sel. Top. Power Electron. 4, 707–719 (2016)
5. Weiss, B., et al.: Monolithically-integrated multilevel inverter on lateral GaN-on-Si technology for high-voltage applications. 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).1–4 (2015)
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