p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering-Reference-Cited by-同舟云学术

p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

Published:2022-05 Issue:5 Volume:69 Page:2282-2286
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhou Guangnan¹^ORCID,Zeng Fanming²,Gao Rongyu²,Wang Qing²^ORCID,Cheng Kai³,Li Lingqi²,Xiang Peng³,Du Fangzhou²^ORCID,Xia Guangrui⁴^ORCID,Yu Hongyu²

Affiliation:

1. School of Microelectronics, Southern University of Science and Technology (SUSTech), Shenzhen, China

2. Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, School of Microelectronics, Shenzhen Institute of Wide Bandgap Semiconductors, and the GaN Device Engineering Technology Research Center of Guangdong, Southern University of Science and Technology (SUSTech), Shenzhen, China

3. Enkris Semiconductor Inc., Suzhou, China

4. Department of Materials Engineering, The University of British Columbia (UBC), Vancouver, BC, Canada

Funder

Guangdong Science and Technology Department

Shenzhen Municipal Council of Science and Innovation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09737317.pdf?arnumber=9737317

Reference27 articles.

1. Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

2. PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

3. Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

4. $\text{V}_{TH}$ instability of p-GaN gate HEMTs under static and dynamic gate stress;he;IEEE Electron Device Lett,2018

5. Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements

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