Optimization of structural parameters in Omega(Ω)-Shaped gate p-GaN MIS-HEMT for performance improvement-Reference-Cited by-同舟云学术

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Optimization of structural parameters in Omega(Ω)-Shaped gate p-GaN MIS-HEMT for performance improvement

Published:2024-04 Issue: Volume:188 Page:207793
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Garg Tanvika,Kale Sumit^ORCID

Publisher

Elsevier BV

Reference24 articles.

1. A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier;Garg;Microelectron. Reliab.,2023

2. A novel stepped AlGaN hybrid buffer GaN HEMT for power electronics applications;Garg;Microelectron. Reliab.,2023

3. p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors

4. The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment

5. GaN-on-Si power technology: devices and applications;Chen,2017

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