Effects of RTA Rising Time on Ferroelectric Characteristics of HfZrO<sub>2</sub>-Reference-Cited by-同舟云学术

Effects of RTA Rising Time on Ferroelectric Characteristics of HfZrO₂

Published:2022-06 Issue:6 Volume:69 Page:3499-3502
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Han Changhyeon¹^ORCID,Kwon Seok Jin¹,Yim Jiyong¹,Kim Jeonghan¹,Kim Sangwoo¹,Jeong Soi¹,Park Eun Chan¹,You Ji Won¹,Choi Rino²^ORCID,Kwon Daewoong¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering and the 3D Convergence Center, Inha University, Incheon, South Korea

2. Department of Materials Science and Engineering, Inha University, Incheon, South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09764892.pdf?arnumber=9764892

Reference24 articles.

1. Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1−x)O2 thin films

2. Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layers

3. Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization

4. Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

5. Effect of dead layers on the ferroelectric property of ultrathin HfZrOx film

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