Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization
Author:
Affiliation:
1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology, 291 Daehakro, Yuseong-gu, Daejeon 34141, South Korea
Funder
Korea Semiconductor Consortium Support Program
National Research Foundation of Korea
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0029516
Reference42 articles.
1. A ferroelectric memristor
2. Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
3. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
4. Giant Electroresistance in Ferroelectric Tunnel Junctions
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