Ferroelectric Tunnel Junction for Dense Cross-Point Arrays-Reference-Cited by-同舟云学术

Ferroelectric Tunnel Junction for Dense Cross-Point Arrays

Published:2015-09-29 Issue:40 Volume:7 Page:22348-22354
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Hong-Sub¹,Han Wooje¹,Chung Hee-Yoon¹,Rozenberg Marcelo²³,Kim Kangsik⁴,Lee Zonghoon⁴,Yeom Geun Young⁵,Park Hyung-Ho¹

Affiliation:

1. Department of Materials Science and Engineering, Yonsei University, Seodaemun-Ku, Seoul 120-749, Korea

2. Laboratoire de Physique des Solides, CNRS-UMR 8502 Université Paris-Sud, Orsay 91405, France

3. IFIBA-Conicet and Departamento de Física, FCEN, Universidad de Buenos Aires, Ciudad Universitaria Pabellón I, (1428) Buenos Aires, Argentina

4. School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea

5. Department of Advanced Materials Science and Engineering and SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Republic of Korea

Funder

Ministry of Knowledge Economy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b06117

Reference44 articles.

1. Ferroelectric tunnel junctions for information storage and processing

2. Multiferroics: progress and prospects in thin films

3. Towards a universal memory?

4. The emergence of spin electronics in data storage

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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