Strain Engineering in Si Split-Gate Trench Power MOSFETs by Partial Oxidation of Polysilicon Electrodes
Author:
Affiliation:
1. Infineon Technologies Austria AG, Villach, Austria
2. Infineon Technologies AG, Neubiberg, Germany
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10053598/10024803.pdf?arnumber=10024803
Reference26 articles.
1. A novel strain enhanced CMOS architecture using selectively deposited high tensile and high compressive silicon nitride films
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3. Stress-Induced Mobility Enhancement for Integrated Power Transistors
4. XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit
5. Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design;ito;IEDM Tech Dig,2000
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2. Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001);Japanese Journal of Applied Physics;2024-03-01
3. Loss Measurement of Low RDS Devices Through Thermal Modelling - The Advantage of Not Turning it Fully On;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
4. Strain Engineering in Modern Si Trench Power MOSFETs — A Performance Booster for Future Generations;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
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