Strain Engineering in Modern Si Trench Power MOSFETs — A Performance Booster for Future Generations
Author:
Affiliation:
1. Infineon Technologies Austria AG,Villach,Austria,9500
2. Montanuniversität Leoben,Department of Materials Science,Leoben,Austria,8700
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147538.pdf?arnumber=10147538
Reference21 articles.
1. X-ray nanodiffraction analysis of residual stresses in polysilicon electrodes of vertical power transistors
2. Strain Engineering in Si Split-Gate Trench Power MOSFETs by Partial Oxidation of Polysilicon Electrodes
3. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
4. Nanobeam electron diffraction strain mapping in monocrystalline silicon of modern trench power MOSFETs
5. Thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures
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