Loss Measurement of Low R<sub>DS</sub> Devices Through Thermal Modelling - The Advantage of Not Turning it Fully On-Reference-Cited by-同舟云学术

Loss Measurement of Low R_DS Devices Through Thermal Modelling - The Advantage of Not Turning it Fully On

Published:2023-09-04 Issue: Volume: Page:
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Container-title:2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
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Author:

Sanz-Alcaine José Miguel¹,Jose Perez-Cebolla Francisco¹,Bernal-Ruiz Carlos¹,Arruti Asier²,Aizpuru Iosu²,Sanchez Juan³

Affiliation:

1. Aragón Institute of Engineering Research (I3A), University of Zaragoza,Group of Power Electronics and Microelectronics (GEPM),Zaragoza,Spain

2. Mondragon Unibertsitatea,Galarreta Campus,Hernani,Spain

3. Infineon Technologies Austria AG,Villach,Austria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10264177/10264226/10264432.pdf?arnumber=10264432

Reference24 articles.

1. Switching Loss Measurement – A Thermal Approach Applied to GaN-Half-Bridge Configuration

2. 100V OptiMOS™ 6 Power-Transistor;datasheet Infineon Technologies,2021

3. Experimental Loss Separation of Mega-hertz Inverter for WPT System using Calorimetric Power Loss Measurement

4. Discrete 1200 v sic mosfets - smd package benefits and impacts of multiple device and circuit parameters mismatch in high power parallel applications;jagannathan;PCIM Europe 2018 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,2018

5. Accuracy Analysis of Calorimetric Loss Measurement for Benchmarking Wide Bandgap Power Transistors under Soft-Switching Operation

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