Fast Unveiling of <i>T</i> <sub>max</sub> in GaN HEMT Devices via the Electrical Measurement-Assisted Two-Heat Source Model-Reference-Cited by-同舟云学术

Fast Unveiling of T _max in GaN HEMT Devices via the Electrical Measurement-Assisted Two-Heat Source Model

Published:2022-05 Issue:5 Volume:69 Page:2319-2324
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kocer Hasan¹^ORCID,Durna Yilmaz¹^ORCID,Gunes Burak²^ORCID,Tendurus Gizem³,Butun Bayram¹^ORCID,Ozbay Ekmel⁴^ORCID

Affiliation:

1. Nanotechnology Research Center (NANOTAM), Bilkent University, Ankara, Turkey

2. Department of Electrical and Electronics Engineering, Nanotechnology Research Center (NANOTAM), Bilkent University, Ankara, Turkey

3. AB-MicroNano Inc., Bilkent University, Ankara, Turkey

4. Department of Electrical andElectronics Engineering, Institute of Materials Science and Nanotechnology (UNAM), AB-MicroNano Inc., and the Department of Physics, Nanotechnology Research Center (NANOTAM), Bilkent University, Ankara, Turkey

Funder

Turkcell Technology within the framework of 5G and Beyond Joint Graduate Support Program coordinated by the Information and Communication Technologies Authority

Turkish Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09751051.pdf?arnumber=9751051

Reference38 articles.

1. Improved Direct Determination of MOSFET Saturation Voltage Using Fourier Techniques

2. A Roadmap for Building Thermal Models for AlGaN/GaN HEMTs: Simplifications and Beyond

3. High quality GaN-on-SiC with low thermal boundary resistance by employing an ultrathin AlGaN buffer layer

4. Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity

5. Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

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1. Understanding of multiway heat extraction using peripheral diamond in an AlGaN/GaN high electron mobility transistor by electrothermal simulations;Semiconductor Science and Technology;2024-06-07

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3. Modeling of HEMT Devices Through Neural Networks: Headway for Future Remedies;2023 10th International Conference on Electrical and Electronics Engineering (ICEEE);2023-05-08

4. Unveiling T_max Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements;IEEE Transactions on Device and Materials Reliability;2023-03