Modeling of HEMT Devices Through Neural Networks: Headway for Future Remedies
Author:
Affiliation:
1. Politecnico di Torino,Department of Electronics and Telecommunications,Turin,Italy
2. Dogus University,Department of Electrical and Electronics Engineering,Istanbul,Turkey
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10298260/10298650/10298665.pdf?arnumber=10298665
Reference81 articles.
1. Directed Graph Navigated Digital Predistortion of mmWave Power Amplifiers for 6G Hopping Applications
2. AlGaN/GaN HEMTs-an overview of device operation and applications
3. A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers
4. A Dual-Band GaN MMIC Power Amplifier With Hybrid Operating Modes for 5G Application
5. GaN HEMTs and MMICs for space applications
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