Exploring Optimum Designs for 1.2kV 4H-SiC JBS Diode Integrated MOSFETs (JBSFETs)
Author:
Affiliation:
1. State University of New York Polytechnic Institute,College of Nanoscale Science and Engineering,Albany,NY,USA,12203
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9955039/9955045/09955290.pdf?arnumber=9955290
Reference15 articles.
1. Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications
2. Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances
3. A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension
4. A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel
5. Surface Erosion of Ion-Implanted 4H-SiC during Annealing with Carbon Cap
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18
2. Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET;IEEE Transactions on Power Electronics;2023
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