Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications-Reference-Cited by-同舟云学术

Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications

Published:2020-03 Issue:1 Volume:8 Page:16-23
ISSN:2168-6777
Container-title:IEEE Journal of Emerging and Selected Topics in Power Electronics
language:
Short-container-title:IEEE J. Emerg. Sel. Topics Power Electron.

Author:

Yun Nick^ORCID,Lynch Justin,Sung Woongje^ORCID

Funder

Office of Energy Efficiency and Renewable Energy

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

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3. Exploring Optimum Designs for 1.2kV 4H-SiC JBS Diode Integrated MOSFETs (JBSFETs);2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07