Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances-Reference-Cited by-同舟云学术

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Increased 3rd Quadrant Current Handling Capability of 1.2kV 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) with Minimal Impact on the Forward Conduction and Blocking Performances

Published:2021-11-07 Issue: Volume: Page:
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Container-title:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Mancini Stephen A,Jang Seung Yup,Kim Dongyoung,Sung Woongje

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9645059/9645074/09645152.pdf?arnumber=9645152

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET;IEEE Transactions on Power Electronics;2023

2. Exploring Optimum Designs for 1.2kV 4H-SiC JBS Diode Integrated MOSFETs (JBSFETs);2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07

3. An Optimal Design for 1.2kV 4H-SiC JBSFET (Junction Barrier Schottky Diode Integrated MOSFET) With Deep P-Well;IEEE Electron Device Letters;2022-05

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