Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS-Reference-Cited by-同舟云学术

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Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS

Published:2010 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE International Reliability Physics Symposium
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Author:

Rodriguez J.,Remack K.,Gertas J.,Wang L.,Zhou C.,Boku K.,Rodriguez-Latorre J.,Udayakumar K. R.,Summerfelt S.,Moise T.,Kim D.,Groat J.,Eliason J.,Depner M.,Chu F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5482567/5488659/05488738.pdf?arnumber=5488738

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O₂-Based Ferroelectric NVDRAM;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide;IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control;2024-02

5. Role of Defects in the Breakdown Phenomenon of Al_1–xSc_xN: From Ferroelectric to Filamentary Resistive Switching;Nano Letters;2023-07-31

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