Materials Engineering for High Performance Ferroelectric Memory-Reference-Cited by-同舟云学术

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Materials Engineering for High Performance Ferroelectric Memory

Published:2024-05-12 Issue: Volume: Page:1-4
ISSN:
Container-title:2024 IEEE International Memory Workshop (IMW)
language:
Short-container-title:

Author:

Chavan Ashonita¹,Rajagopal Adharsh¹,Yan Yixin¹,Asano Isamu¹,Ettisserry Devanarayanan¹,Antonov Vassil¹,Servalli Giorgio¹,Calderoni Alessandro¹,Ramaswamy Nirmal¹

Affiliation:

1. Micron Technology,Advanced DRAM and Emerging Memory,Boise,ID,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10536936/10536916/10536948.pdf?arnumber=10536948

Reference11 articles.

1. NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads

2. Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O₂-Based Ferroelectric NVDRAM

3. Ferroelectricity in hafnium oxide thin films

4. Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

5. Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

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